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IXYS

IXGT40N60C2 Datasheet Preview

IXGT40N60C2 Datasheet

HiPerFAST IGBT

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HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 40N60C2
IXGT 40N60C2
V
I CES
VC25
t CE(sat)
fi typ
www.DataSheet4U.com
= 600 V
= 75 A
= 2.7 V
= 32 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Md
Weight
Mounting torque (M3)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
40 A
200 A
ICM = 80
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
200 °C
TO-247
TO-268
1.13/10Nm/lb.in.
6g
4g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 μA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 30 A, VGE = 15 V
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
TJ = 150°C
50 μA
1 mA
±100 nA
2.2 2.7 V
2.0 V
TO-268 (IXGT)
G
E
TO-247 (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Very high frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99042C(10/05)




IXYS

IXGT40N60C2 Datasheet Preview

IXGT40N60C2 Datasheet

HiPerFAST IGBT

No Preview Available !

Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 30 A; VCE = 10 V,
Pulse test, t 300 μs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 30 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3 Ω
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3 Ω
(TO-247)
20 36
S
2500
180
54
pF
pF
pF
95 nC
14 nC
36 nC
18
20
90
32
0.20
ns
ns
140 ns
ns
0.37 mJ
18
20
0.3
130
80
0.50
ns
ns
mJ
ns
240 ns
mJ
0.42 K/W
0.25
K/W
IXGH 40N60C2
IXGT 40N60C2
www.DataSheet4U.com
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2


Part Number IXGT40N60C2
Description HiPerFAST IGBT
Maker IXYS
Total Page 5 Pages
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