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IXRA15N120 - IGBT

Key Features

  • IGBT with NPT (non punch through) structure.
  • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery.
  • positive temperature coefficient of saturation voltage.
  • Epoxy of package meets UL 94V-0.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information IXRA 15N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat) typ. = 2.5 V 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C VGE = 0/15 V; RG = 47 Ω; TVJ = 125°C RBSOA; Clamped inductive load; L = 100 µH 600 V TC = 25°C Maximum Ratings ± 1200 V ± 20 V 25 A 15 A 30 A 600 V 10 µs 300 W Symbol VCE(sat) VGE(th) ICES IGES QGon Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 10 A; VGE = 15 V IC = 1 mA; VGE = VCE TVJ = 25°C TVJ = 125°C VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V VCE = 120 V; VGE = 15 V; IC = 10 A 2.