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IXYS
IXYS

IXSH45N120 Datasheet Preview

IXSH45N120 Datasheet

High Voltage IGBT

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IXSH45N120 pdf
High Voltage,
Low VCE(sat) IGBT
Short Circuit SOA Capability
IXSH 45N120
VCES
IC25
VCE(sat)
= 1200 V
= 75 A
= 3V
Symbol
Test Conditions
V
CES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C, limited by leads
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 2.7 W
Clamped inductive load, L = 30 mH
tSC
(SCSOA)
PC
TJ
TJM
Tstg
M
d
Weight
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
1200
±20
±30
75
45
180
ICM = 90
@ 0.8 V
CES
10
V
V
V
V
A
A
A
A
ms
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Symbol
BV
CES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
I = 3 mA, V = 0 V
C GE
IC = 4 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
4
6
V
8V
TJ = 25°C
TJ = 125°C
400 mA
1.2 mA
±100 nA
3V
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
q International standard package
JEDEC TO-247
q High frequency IGBT with guaranteed
Short Circuit SOA capability
q Fast Fall Time for switching speeds
up to 20 kHz
q 2nd generation HDMOSTM process
q Low V
CE(sat)
- for minimum on-state conduction
losses
q MOS Gate turn-on
- drive simplicity
Applications
q AC motor speed control
q DC servo and robot drive
q Uninterruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
q Welding
Advantages
q Easy to mount with 1 screw
(isolated mounting screw hole)
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92773F (7/00)
1-4



IXYS
IXYS

IXSH45N120 Datasheet Preview

IXSH45N120 Datasheet

High Voltage IGBT

No Preview Available !

IXSH45N120 pdf
IXSH 45N120
Symbol
gfs
IC(on)
Cies
C
oes
Cres
Qg
Qge
Q
gc
td(on)
tri
td(off)
t
fi
Eoff
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VGE = 15 V, VCE = 10 V
V = 25 V, V = 0 V, f = 1 MHz
CE GE
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
2.7
W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
26 S
170 A
4150
285
65
pF
pF
pF
150 200 nC
45 60 nC
75 100 nC
80
250
400
1000
21
ns
ns
ns
ns
mJ
80
250
7.1
450
1200
27
ns
ns
mJ
ns
ns
mJ
0.42 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4


Part Number IXSH45N120
Description High Voltage IGBT
Maker IXYS
Total Page 4 Pages
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IXSH45N120 pdf
IXSH45N120 Datasheet PDF
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