* z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100187C(04/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specifie
IXTA02N250 Datasheet (239.07 KB)
IXTA02N250
IXYS
239.07 KB
High voltage power mosfet.
High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450.
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