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IXTA02N450HV - High Voltage Power MOSFETs

Key Features

  • z High Blocking Voltage z High Voltage Packages Advantages z Easy to Mount z Space Savings z High Power Density.

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High Voltage Power MOSFETs Advance Technical Information IXTA02N450HV IXTT02N450HV VDSS I D25 RDS(on) = 4500V = 200mA ≤ 750Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C Maximum Ratings 4500 V 4500 V ±20 V ±30 V 200 mA 600 mA 113 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Force (TO-263) 10..65 / 22..14.6 N/lb TO-263 TO-268 2.5 g 4.