Overview: High Voltage Power MOSFETs Advance Technical Information IXTA02N450HV IXTT02N450HV VDSS I
D25
RDS(on) = 4500V = 200mA ≤ 750Ω N-Channel Enhancement Mode Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
FC
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C Maximum Ratings 4500 V 4500 V ±20 V ±30 V 200 mA 600 mA 113 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Force (TO-263) 10..65 / 22..14.6 N/lb TO-263 TO-268 2.5 g 4.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100°C RDS(on) VGS = 10V, ID = 10mA, Note 1 Characteristic Values Min. Typ. Max. 4.0 6.
