IXTH1N450HV, IXTT1N450HV Datasheet - IXYS

IXTH1N450HV High Voltage Power MOSFET

High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 1 A 3 A TC = 25C 520 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 1.6 mm .

IXTH1N450HV Features

* High Blocking Voltage

* High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characterist

IXTT1N450HV_IXYS.pdf