IXTH24P20 Description
+150 °C °C °C 400 °C 250 °C 1.13/10 Nm/lb.in. 6g 5g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. TO-247 (IXTH) D (TAB) TO-268 (IXTT) GS D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.
IXTH24P20 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process