Download the IXTP7N60P datasheet PDF.
This datasheet also covers the IXTA7N60P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max. 600
V
V GS(th)
V DS
=
V, GS
I
D
=
100µA
3.0
5.5 V
IGSS
VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
5 µA 50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2.
Full PDF Text Transcription for IXTP7N60P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP7N60P. For precise diagrams, and layout, please refer to the original PDF.
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EA...
View more extracted text
ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, T J ≤150° C, R G = 18 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings TO-220 (IXTP) 600 V 600 V ±30 V ±40 V G DS 7 A 14 A TO-263 (IXTA) 7 A 20 mJ 400 mJ 10 V/ns G S (TAB) (TAB) 150 W -55 ... +150 °C 150 °C -55 ...
IXTP7N60P Datasheet
