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IXTP7N60PM - Power MOSFET

This page provides the datasheet information for the IXTP7N60PM, a member of the IXTA7N60PM Power MOSFET family.

Features

  • g V V Ω r e . n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 +150 150 - 55 +150 ce. °C °C °C °C °C Nm/lb. in. Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings.

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Datasheet Details

Part number IXTP7N60PM
Manufacturer IXYS Corporation
File Size 197.81 KB
Description Power MOSFET
Datasheet download datasheet IXTP7N60PM Datasheet
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Full PDF Text Transcription

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Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA7N60PM IXTP7N60PM VDSS ID25 RDS(on) = 600V = 4A ≤ 1.1Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 600 600 8 c T ± 30 ± 40 4 14 V V A A 7 400 10 A mJ t e n 41 om D S W Features g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 ... +150 150 - 55 ... +150 ce. °C °C °C °C °C Nm/lb.in.
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