IXTP7N60PM Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP7N60PM ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VG

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Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I

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