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IXTP7N60PM - N-Channel MOSFET

Features

Drain Source Voltage- : VDSS= 600V(Min).
Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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IXTP7N60PM N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTP7N60PM

Datasheet Details

Part number	IXTP7N60PM
Manufacturer	INCHANGE
File Size	247.63 KB
Description	N-Channel MOSFET
Datasheet	IXTP7N60PM Datasheet
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isc N-Channel MOSFET Transistor IXTP7N60PM ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 1.

Published: Nov 16, 2020 |