IXTP7N60P Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g G = Gate S = Source D = Drain TAB = Drain.
IXTP7N60P Key Features
- easy to drive and to protect
- di/dt = 100 A/µs, VR = 100 V
- Part: IXTP7N60P
- Manufacturer: IXYS (official site)
- Size: 173.38 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTP7N60P | N-Channel MOSFET |
|
Inchange Semiconductor |
IXTP7N60PM | N-Channel MOSFET |
IXYS |
IXTP7N60PM | Power MOSFET |