PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-C.
INCHANGE
IXTP7N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP7N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltag.
IXYS
IXTP7N60P - Power MOSFET
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V D.
INCHANGE
IXTP7N60PM - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP7N60PM ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VG.
IXYS Corporation
IXTP7N60PM - Power MOSFET
Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I.