Overview: Preliminary Technical Information Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T VDSS = ID25 =
RDS(on) ≤ 150V 90A 20mΩ Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ TC = 25°C *
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM TC = TC = 25°C 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 150 150
± 30
90 75 250
4 750
10
455
-55 ... +175 175
-55 ... +175 1.6mm (0.062 in.) from case for 10s 300 Plastic body for 10 seconds 260 Mounting Torque(TO-220,TO-3P,TO-247) 1.13/10 Mounting Force (TO-263) 10..65/2.2..14.6 TO-263 2.5 TO-220 3 TO-3P 5.5 TO-247 6 V V
V
A A A
A μJ
V/ns
W
°C °C °C
°C °C
Nm/lb.in. N/lb.
g g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.
