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IXTT30N50P - PolarHV Power MOSFET

Download the IXTT30N50P datasheet PDF. This datasheet also covers the IXTH30N50P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99415E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Test Conditions Characteristic Values (T J = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 20 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH30N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTT30N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT30N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ T...

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P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) PLUS220, PLUS220SMD TO-268 TO-3P TO-247 500 V 500 V ±30

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