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IXYS

IXTU4N60P Datasheet Preview

IXTU4N60P Datasheet

PolarHV Power MOSFET

No Preview Available !

PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTU4N60P
IXTY4N60P
IXTA4N60P
IXTP4N60P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
600
V
600
V
30
V
40
V
TC = 25C
4
A
TC = 25C, Pulse Width Limited by TJM
10
A
TC = 25C
OBSOLE4 TE A
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
IXTY4N1150060P
mJ
V/ns
TC = 25C
IXTA4N9060P W
IXTP4N60P -55 ... +150
C
150
C
-55 ... +150
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6
Mounting Torque (TO-220)
1.13 / 10
N/lb
Nm/lb.in
TO-251
TO-252
TO-263
TO-220
0.40
g
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 100μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
100 nA
1 A
50 A
2
© 2017 IXYS CORPORATION, All Rights Reserved
VDSS =
ID25 =
RDS(on)
600V
4A
2
TO-251 (IXTU)
G
D
S
TO-252 (IXTY)
D (Tab)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge
Circiuts
in
Lasers,
Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
DS99423F(6/17)




IXYS

IXTU4N60P Datasheet Preview

IXTU4N60P Datasheet

PolarHV Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30(External)
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max
2.8
4.6
S
635
pF
65
pF
5.7
pF
13
nC
6
nC
4
nC
25
ns
10
ns
50
ns
20
ns
1.4 C/W
0.50
C/W
IXTU4N60P
IXTA4N60P
IXTY4N60P
IXTP4N60P
Source-Drain Diode
Symbol
Test Conditions
OBSOLETE
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
IXTMYin.4NTy6p. 0PMax
IS
ISM
IXTA4N60P VGS = 0V
Repetitive, Pulse Width Limited by TJM
4A
12 A
VSD
IF = IS, VGS = 0V, Note 1
IXTP4N60P1.5 V
trr
IF = 4A, -di/dt = 100A/μs, VR = 100V
500
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537


Part Number IXTU4N60P
Description PolarHV Power MOSFET
Maker IXYS
PDF Download

IXTU4N60P Datasheet PDF






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