IXTU4N60P Overview
Key Features
- Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTU4N60P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 270.27 KB |
Pricing from 0.3264 USD, available from UnikeyIC and Unikeyic (ICkey).
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| UnikeyIC | 400000 | 50+ : 0.3264 USD 100+ : 0.321 USD 150+ : 0.3127 USD |
View Offer |
| Unikeyic (ICkey) | 400000 | 50+ : 0.3264 USD 100+ : 0.321 USD 150+ : 0.3127 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IXTU4N60P | IXYS | PolarHV Power MOSFET |