IXTU4N60P Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor IXTU4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-.

*Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*DC/DC Converter
*Ideal for high-frequency switching and synchronous .

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Co.

* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
* AC and DC Motor Drives
*  Dischar.