• Part: IXTU4N60P
  • Manufacturer: IXYS
  • Size: 838.33 KB
Download IXTU4N60P Datasheet PDF
IXTU4N60P page 2
Page 2
IXTU4N60P page 3
Page 3

IXTU4N60P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M.

IXTU4N60P Key Features

  • International Standard Packages
  • Low QG
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier
  • High Power Density
  • Easy to Mount
  • Space Savings