* Optimized for Low Switching Losses
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
IXYJ20N120C3D1 Datasheet (220.93 KB)
IXYJ20N120C3D1
IXYS
220.93 KB
Igbt.
1200V XPTTM IGBT GenX3TM w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ20N120C3D1 Symbol VCES VCGR VGES VGEM IC25.
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