Datasheet4U Logo Datasheet4U.com

IXYJ30N120C3D1 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque 50/60 Hz, RM, t = 1min Maximum Ratings 1200 1200 V V ±20 V ±30 V 32 A 14 A 15 A 128 A 20 A 400 mJ ICM = 60 VCE VCES 140 A W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2500 5 V~ g VCES = 1200V IC110 = 14A VCE(sat)  3.

Key Features

  • Optimized for Low Switching Losses.
  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Anti-Parallel Ultra Fast Diode.
  • Avalanche Rated Advantages.
  • High Power Density.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCE.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXYJ20N120C3D1 IGBT
IXYA12N250CHV High Voltage IGBT
IXYA15N65C3D1 IGBT
IXYA20N120A4HV IGBT
IXYA20N120B4HV IGBT
IXYA20N120C4HV IGBT
IXYA20N65B3 IGBT
IXYA20N65C3 IGBT
IXYA20N65C3D1 IGBT
IXYA24N100A4HV Ultra-Low Vsat PT IGBT

IXYJ30N120C3D1 Distributor