IXYJ30N120C3D1 Description
+150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2500 5 V~ g VCES = 1200V IC110 = 14A VCE(sat) 3.3V tfi(typ) = 88ns ISO TO-247TM E153432 G CE G = Gate E = Emitter Isolated Tab C = Collector.
IXYJ30N120C3D1 Key Features
- Optimized for Low Switching Losses
- Silicon Chip on Direct-Copper Bond
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- High Power Density
- Low Gate Drive Requirement