Datasheet4U Logo Datasheet4U.com

IXYJ30N120C3D1 - IGBT

Features

  • Optimized for Low Switching Losses.
  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Anti-Parallel Ultra Fast Diode.
  • Avalanche Rated Advantages.
  • High Power Density.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCE.

📥 Download Datasheet

Datasheet preview – IXYJ30N120C3D1

📁 Similar Datasheet

Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque 50/60 Hz, RM, t = 1min Maximum Ratings 1200 1200 V V ±20 V ±30 V 32 A 14 A 15 A 128 A 20 A 400 mJ ICM = 60 VCE VCES 140 A W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.
Published: |