IXYL60N450 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density
- Part: IXYL60N450
- Manufacturer: IXYS (official site)
- Size: 632.01 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXYL40N250CV1 | High Voltage IGBT |
| IXYA12N250CHV | High Voltage IGBT |
| IXYA15N65C3D1 | IGBT |
| IXYA20N120A4HV | IGBT |
| IXYA20N120B4HV | IGBT |
IXYL60N450 Description
High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V 3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C,.