Datasheet4U Logo Datasheet4U.com

IXYL60N450 - High Voltage IGBT

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXYA20N120C3HV 1200V XPT GenX3 IGBTs IXYS Corporation
IXYB82N120C3H1 High-Speed IGBT IXYS Corporation
IXYH20N120C3 1200V XPT GenX3 IGBTs IXYS Corporation
IXYH50N120C3 High-Speed IGBT IXYS Corporation
IXYH50N120C3D1 High-Speed IGBT IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXYL40N250CV1 High Voltage IGBT
IXYA12N250CHV High Voltage IGBT
IXYA15N65C3D1 IGBT
IXYA20N120A4HV IGBT
IXYA20N120B4HV IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V  3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 4.7 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Force Maximum Ratings 4500 V 4500 V ±20 V ±30 V 90 A 38 A 680 A ICM = 120 A 1500 V 417 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 40..120 / 9..27 N/lb 50/60 Hz, RM, t = 1min 4000 V~ 8 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ.