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IXYN120N120C3 - IGBT

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • miniBLOC, with Aluminium Nitride Isolation.
  • International Standard Package.
  • Isolation Voltage 2500V~.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching Advance Technical Information IXYN120N120C3 VCES = 1200V IC110 = 120A VCE(sat)  3.20V tfi(typ) = 96ns E Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 240 A 200 A 120 A 700 A 60 A 2J ICM = 240 VCE VCES 1200 A W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.