* Optimized for Low 5-30kHz Switching
* Square RBSOA
* Anti-Parallel Fast Diode
* Avalanche Rated
* Short Circuit Capability Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specifi
IXYQ40N65B3D1 Datasheet (192.11 KB)
IXYQ40N65B3D1
IXYS
192.11 KB
Igbt.
Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH40N65B3D1 IXYQ40N65B3D1 V.
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