IXYQ30N65B3D1 Overview
+175 300 260 1.13/10 6.0 5.5 W °C °C °C °C °C Nm/lb.in g g TO-247 (IXYH) G CE TO-3P (IXYQ) Tab G C E G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXYQ30N65B3D1 Key Features
- Optimized for Low 5-30kHz Switching
- Square RBSOA
- Anti-Parallel Fast Diode
- Avalanche Rated
- Short Circuit Capability
- High Power Density
- Extremely Rugged
- Low Gate Drive Requirement