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IXYQ30N65B3D1 - IGBT

This page provides the datasheet information for the IXYQ30N65B3D1, a member of the IXYH30N65B3D1 IGBT family.

Features

  • Optimized for Low 5-30kHz Switching.
  • Square RBSOA.
  • Anti-Parallel Fast Diode.
  • Avalanche Rated.
  • Short Circuit Capability Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteri.

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH30N65B3D1 IXYQ30N65B3D1 VCES = 650V IC110 = 30A VCE(sat)  2.1V tfi(typ) = 33ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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