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IXYR100N120C3 - IGBT

Key Features

  • z Optimized for Low Switching Losses z Square RBSOA z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM IGBT GenX3TM (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR100N120C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings 1200 1200 V V ±20 V ±30 V 104 A 58 A 480 A 50 A 1.2 J ICM = 200 ≤@VCE VCES 484 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 2500 V~ 20..120/4.5..27 5 N/lb.