IXYR50N120C3D1 Description
1200V XPTTM IGBT GenX3TM w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR50N120C3D1 Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C.
IXYR50N120C3D1 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Optimized for Low Switching Losses
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- High Current Handling Capability
- International Standard Package
- High Power Density
- Low Gate Drive Requirement