Overview: 1200V XPTTM IGBT GenX3TM w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching IXYR50N120C3D1 Symbol
VCES VCGR
VGES VGEM
IC25 IC90 IF110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
VISOL
FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 90°C TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load
TC = 25°C 56 A 32 A 18 A 210 A ICM = 100 A @VCE VCES 290 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C 50/60 Hz, 1 Minute 2500 V~ Mounting Force 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 A 500 μA 100 nA 3.5 V 4.2 V VCES = 1200V IC90 = 32A V CE(sat) 3.
