Overview: 1200V XPTTM IGBT GenX3TM
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching IXYR100N120C3 Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
VISOL
FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute
Mounting Force Maximum Ratings 1200 1200 V V ±20 V ±30 V 104 A 58 A
480 A 50 A 1.2 J ICM = 200
≤@VCE VCES
484 A W -55 ... +175 175
-55 ... +175 °C °C °C 300 °C 260 °C 2500 V~ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 μA 1.25 mA ±100 nA 2.9 3.5 V 4.1 V VCES IC110 VCE(sat) tfi(typ) = =
≤ = 1200V 58A
3.
