IXYR50N120C3D1 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Optimized for Low Switching Losses
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- High Current Handling Capability
- International Standard Package
- High Power Density
- Low Gate Drive Requirement