IXYT20N120C3D1HV Key Features
- Optimized for Low Switching Losses
- Square RBSOA
- High Voltage Package
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- High Power Density
- Low Gate Drive Requirement
IXYT20N120C3D1HV is IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXYT25N250CHV | High Voltage IGBT |
| IXYT12N250CV1HV | High Voltage IGBT |
| IXYT30N450HV | IGBT |
| IXYT30N65C3H1HV | IGBT |
| IXYT40N120A4HV | Ultra Low-Vsat PT IGBT |
+150 °C °C °C 300 °C 260 °C 4g TO-268HV G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.