* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* High Voltage Package
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
* High Power Density
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C,
IXYT20N120C3D1HV Datasheet (224.79 KB)
IXYT20N120C3D1HV
IXYS
224.79 KB
Igbt.
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYT20N120C3D1HV VCES = 1200V IC110 = 17A VCE(sat) 3.4V tfi(typ) = 10.
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