IXYT30N65C3H1HV Description
650 V 3.5 6.0 V 50 A 4 mA 100 nA 2.35 2.58 2.70 V V G E C (Tab) TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXYT30N65C3H1HV Key Features
- Optimized for 20-60kHz Switching
- Square RBSOA
- High Voltage
- Avalanche Rated
- Short Circuit Capability
- Anti-Parallel Sonic Diode
- High Power Density
- Extremely Rugged
- Low Gate Drive Requirement