IXYT20N120C3D1HV Description
+150 °C °C °C 300 °C 260 °C 4g TO-268HV G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.
IXYT20N120C3D1HV Key Features
- Optimized for Low Switching Losses
- Square RBSOA
- High Voltage Package
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- High Power Density
- Low Gate Drive Requirement