IXYT20N120C3D1HV Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

IXYT20N120C3D1HV igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXYT20N120C3D1HV
Manufacturer	IXYS (now Littelfuse)
File Size	224.79 KB
Description	IGBT
Download	IXYT20N120C3D1HV Download (PDF)

Overview

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYT20N120C3D1HV VCES = 1200V IC110 = 17A VCE(sat)  3.4V tfi(typ) = 108ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 1200 1200 V V ±20 V ±30 V 36 A 17 A 20 A 88 A 10 A 400 mJ ICM = 40 @VCE VCES 230 A W -55 ...

+150 150 -55 ...

Key Features

Optimized for Low Switching Losses.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
High Voltage Package.
Anti-Parallel Ultra Fast Diode.
Avalanche Rated Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1.

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