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IXYT20N120C3D1HV - IGBT

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IXYS

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IXYT20N120C3D1HV IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYT20N120C3D1HV

Datasheet Details

Part number	IXYT20N120C3D1HV
Manufacturer	IXYS
File Size	224.79 KB
Description	IGBT
Datasheet	IXYT20N120C3D1HV Datasheet
Additional preview pages of the IXYT20N120C3D1HV datasheet.

Product details

Features

Optimized for Low Switching Losses.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
High Voltage Package.
Anti-Parallel Ultra Fast Diode.
Avalanche Rated Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1.

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Published: Aug 19, 2016 |