IXZR16N60A
Key Features
- Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power
- IXYS advanced Z-MOS process
- Low gate charge and capacitances − easier to drive − faster switching
- Very low insertion inductance (<2nH)
- No beryllium oxide (BeO) or other
- High Performance RF Z-MOSTM
- Optimized for RF and high speed
- Isolated Package, no insulator
