IXZR16N60
IXZR16N60 is Z-MOS RF Power MOSFET manufactured by IXYS.
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET
N-Cha Nn Cnehla Ennheal Encnehmanecnetm Meondte MSowdietch Mode RF MOSFET
Low CLaopwac Qitgaanncde RZg-MOSTM MOSFET Process Optim Hiziegdh fdovr/Rdt F Operation
Ideal f Noran Colassesco Cn,d DS, w&it Ech Ainpgplications
VDSS ID25
= 600 V = 18 A
Symbol VDSS VDGR
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
RDS(on) ≤ 0.56 Ω
=
VGS VGSM
Continuous Transient
±20
±30
= =G 60A60B =
ID25
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
IAR EAR
Tc = 25°C Tc = 25°C
TBD m J
G S dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω
IS = 0
5 >200
V/ns V/ns
PDC PDHS PDAMB Rth JC Rth JHS
Tc = 25°C, Derate 4.4W/°C above 25°C Tc =...
