IXZR16N60 Description
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications VDSS.
IXZR16N60 Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- IXYS advanced Z-MOS process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low RDS(on)
- Very low insertion inductance (<2nH)