IXZR16N60A Datasheet | IXYS

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-Cha Nn Cnehla Ennheal Encnehmanecnetm Meondte MSowdietch Mode RF MOSFET Low CLaopwac Qitgaanncde RZg-MOSTM MOSFET Process Optim Hiziegdh fdovr/Rdt F Operation Ideal f Noran Colassesco Cn,d DS, w&it Ech Ainpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings RDS(on) ≤ 0.56 Ω = VGS VGSM Continuous Transient ±20 ±30 = =G 60A60B = ID25 Tc = 25°C Tc = 25°C, pulse width limited by TJM IAR EAR Tc = 25°C Tc = 25°C TBD m J G S dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 5 >200 V/ns V/ns PDC PDHS PDAMB Rth JC Rth JHS Tc = 25°C, Derate 4.4W/°C above 25°C Tc =...