MIXA10WB1200TML - IGBT

Datasheet Details

High level of integration - only one power semiconductor module required for the whole drive.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
Temperature sense included.
SONIC™ diode - fast and soft reverse recovery - low operating for.

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Published: Aug 22, 2016 |