Part MIXA10WB1200TED
Description IGBT
Manufacturer IXYS
Size 218.50 KB
IXYS

MIXA10WB1200TED Overview

Key Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage
  • Rugged XPT design (Xtreme light Punch Through) results in
  • short circuit rated for 10 µsec
  • very low gate charge
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
  • SONIC™ diode
  • fast and soft reverse recovery
  • low operating forward voltage