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MIXA10WB1200TML - IGBT

Key Features

  • High level of integration - only one power semiconductor module required for the whole drive.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • Temperature sense included.
  • SONIC™ diode - fast and soft reverse recovery - low operating for.

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Converter - Brake - Inverter Module XPT IGBT Preliminary data Part name (Marking on product) MIXA10WB1200TML MIXA10WB1200TML Three Phase Rectifier Brake Three Phase Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 100 A IC25 = 17 A IC25 = 17 A IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V E72873 Pin configuration see outlines. Features: • High level of integration - only one power semiconductor module required for the whole drive • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.