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MIXA81WB1200TEH - XPT IGBT

Key Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXA81H1200EH IGBT Module
MIXA80R1200VA XPT IGBT
MIXA80W1200TED XPT IGBT
MIXA80W1200TEH XPT IGBT
MIXA80WB1200TEH IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPT IGBT Module MIXA81WB1200TEH tentative 3~ Rectifier Brake Chopper 3~ Inverter VRRM = I DAV = I FSM = 1600 V VCES = 1200 V VCES = 1200 V 290 A IC25 = 90 A IC25 = 120 A 1200 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA81WB1200TEH 30/31/32 26/27 1/2 3/4 5/6 23 7 28/29 22 10 8/9 20 33/34/35 24/25 21 13 11/12 18 Backside: isolated 17 14/15 16 19 Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.