* / Advantages:
* MOSFETs in trench technology:
* low RDSon
* optimized intrinsic reverse diode
* Package:
* high level of integration
* high current capability
* aux. terminals for MOSFET control
MTI145WX100GD Datasheet (397.67 KB)
MTI145WX100GD
IXYS
397.67 KB
Three phase full bridge.
Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package MTI145WX100GD VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW P.
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