* / Advantages:
* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability - aux. terminals for MOSFET gate control - terminals for soldering or welding connections - isolated DC
MTI200WX75GD Datasheet (287.19 KB)
MTI200WX75GD
IXYS
287.19 KB
Three phase full bridge.
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MTI200WX75GD VDSS = 75 V ID25 = 255 A RDSon typ. = 1.1 mW Par.
📁 Related Datasheet
MTI04Bx (MTI04Bx / MTI08Bx) Programmable Gain Transimpedance Amplifier (MAZeT)
MTI04CQ Multi-Channel Programmable Gain Transimpedance Amplifier (MAZet)
MTI04CS Multi-Channel Programmable Gain Transimpedance Amplifier (MAZet)
MTI08Bx (MTI04Bx / MTI08Bx) Programmable Gain Transimpedance Amplifier (MAZeT)
MTI145WX100GD Three phase full Bridge (IXYS)
MTI3006X VHF/UHF-Tuner IC (Siemens Semiconductor)
MTI85W100GC Three phase full Bridge (IXYS)
MTIL113 6-Pin DIP Optoisolators Darlington Output (Motorola)
MTIL117 6-Pin DIP Optoisolator Transistor Output (Motorola)
MT-10 Low Ohm Power Resistors (Riedon)
