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MWI50-12T7T - IGBT

Key Features

  • Trench IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Six-Pack Trench IGBT Part name (Marking on product) MWI 50-12T7T 25, 26 1 17 2 NTC 18 3 4 27, 28 5 9 6 10 7 11 8 12 MWI 50-12T7T IC25 = 80 A VCES = 1200 V V = CE(sat) typ. 1.7 V 15, 16 23, 24 21, 22 19, 20 13, 14 E72873 Pin configuration see outlines.