* GaAs Schottky Diode with Enhanced Barrier Height:
* lowest operating forward voltage drop due to additional injection of minority carriers
* high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to sh
DGSK36-03CS Datasheet (55.40 KB)
DGSK36-03CS
IXYS Corporation
55.40 KB
Gallium arsenide schottky rectifier.
Gallium Arsenide Schottky Rectifier Second generation DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Type DGS 17-03CS Marking.
📁 Related Datasheet
DGSK32-018CS Gallium Arsenide Schottky Rectifier (IXYS Corporation)
DGSK20-015A Gallium Arsenide Schottky Rectifier (IXYS)
DGSK20-018A Gallium Arsenide Schottky Rectifier (IXYS)
DGSK20-025A Gallium Arsenide Schottky Rectifier (IXYS)
DGSK20-025AS Gallium Arsenide Schottky Rectifier (IXYS)
DGSK40-025A Gallium Arsenide Schottky Rectifier (IXYS Corporation)
DGSK40-025AS Gallium Arsenide Schottky Rectifier (IXYS Corporation)
DGSK8-025A Gallium Arsenide Schottky Rectifier (IXYS)
DGS10-015A Gallium Arsenide Schottky Rectifier (IXYS)
DGS10-018A Gallium Arsenide Schottky Rectifier (IXYS)
