* International standard package JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* High commutating dv/dt rating
* Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ww w.
IRFP260
IXYS Corporation
68.24 KB
Standard power mosfet.
www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS V.
📁 Related Datasheet
IRFP260 Power MOSFET (Vishay Siliconix)
IRFP260 Power MOSFET (International Rectifier)
IRFP260 N-Channel MOSFET (INCHANGE)
IRFP260M IR MOSFET (Infineon)
IRFP260M N-Channel MOSFET (INCHANGE)
IRFP260MPbF IR MOSFET (Infineon)
IRFP260MPBF Power MOSFET (International Rectifier)
IRFP260N Power MOSFET (International Rectifier)
IRFP260N N-Channel MOSFET (INCHANGE)
IRFP260NPBF HEXFET Power MOSFET (International Rectifier)
