IRFP260
IRFP260 is Standard Power MOSFET manufactured by IXYS.
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Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 260 VDSS
ID (cont) RDS(on)
= 200 V = 46 A = 55 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A m J V/ns W °C °C °C
TO-247 AD
Continuous Transient TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C
D (TAB)
28 5 280 -55 ... +150 150 -55 ... +150
G = Gate, S = Source,
D = Drain, TAB = Drain
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, IS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
1.13/10 Nm/lb.in. 6 300 g °C
Features
- International standard package JEDEC TO-247 AD
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- High mutating dv/dt rating
- Fast switching times
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ww w.D ata Sh eet 4U .co m
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 25 250 V V n A µA µA Ω
Applications
- Switch-mode and resonant-mode power...
