Datasheet Details
| Part number | IXBT42N170A |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 238.23 KB |
| Description | Monolithic Bipolar MOS Transistor |
| Download | IXBT42N170A Download (PDF) |
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Download the IXBT42N170A datasheet PDF. This datasheet also includes the IXBH42N170A variant, as both parts are published together in a single manufacturer document.
| Part number | IXBT42N170A |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 238.23 KB |
| Description | Monolithic Bipolar MOS Transistor |
| Download | IXBT42N170A Download (PDF) |
|
|
|
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=p1e2ti0tiv0eV, TJ = 125°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 42 A 21 A 265 A ICM = 84 1360 A V 10 357 -55 ...
+150 150 -55 ...
+150 300 260 1.13/10 4 6 µs W °C °C °C °C °C Nm/lb.in.
| Part Number | Description |
|---|---|
| IXBT42N170 | Monolithic Bipolar MOS Transistor |
| IXBT10N170 | Bipolar MOS Transistor |
| IXBT16N170A | Bipolar MOS Transistor |
| IXBD4410 | Half Bridge Driver Chipset |
| IXBD4411 | Half Bridge Driver Chipset |
| IXBF9N140 | High Voltage BIMOSFET |
| IXBF9N140 | Power MOSFET |
| IXBF9N160 | High Voltage BIMOSFET |
| IXBF9N160 | Power MOSFET |
| IXBH10N170 | Bipolar MOS Transistor |