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IXYS Corporation
IXYS Corporation

IXBT42N170A Datasheet Preview

IXBT42N170A Datasheet

(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor

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IXBT42N170A pdf
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Advance Technical Information
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 42N170A
IXBT 42N170A
VCES = 1700 V
IC25 = 42 A
VCE(sat) = 6.0 V
tfi = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1700
1700
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
42
21
120
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load
ICM =
90
VCES = 1350
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 non repetitive
10
PC TC = 25°C
350
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
350
260
V
V
V
V
A
A
A
A
V
µs
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6g
4g
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Fast switching
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TJ = 125°C
1700
2.5
V
5.5 V
50 µA
1.5 mA
±100 nA
4.5 6.0 V
5.0 V
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Substitutes for high voltage MOSFETs
Advantages
z Lower conduction losses than MOSFETs
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2002 IXYS All rights reserved
98939 (7/02)



IXYS Corporation
IXYS Corporation

IXBT42N170A Datasheet Preview

IXBT42N170A Datasheet

(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor

No Preview Available !

IXBT42N170A pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
15 24
3700
170
45
155
30
55
25
35
230
50
2.8
25
38
5.0
300
120
6
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
(TO-247)
0.35 K/W
0.25
K/W
Reverse Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = IC90, VGE = 0 V, Pulse test,
t < 300 us, duty cycle d < 2%
IRM IF = 25A, VGE = 0 V, -diF/dt = 50 A/us
trr vR = 100V
5.0 V
15 A
330 ns
Min Recommended Footprint
IXBH 42N170A
IXBT 42N170A
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number IXBT42N170A
Description (IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
Maker IXYS Corporation
Total Page 2 Pages
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