* q q q q q q 50/60 Hz; IISOL £ 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard pac
IXDN55N120 Datasheet (72.78 KB)
IXDN55N120
IXYS Corporation
72.78 KB
High voltage igbt with optional diode.
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = .
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