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C5300 - VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS
www.DataSheet4U.com C5300 Typical Applications Base Stations Test Equipment Telecom & Wireless Infrastructure Digital Switching VCXO Features 9X14 .CE2000 - Compact Emulator Optional Memory
www.DataSheet4U.com 16 CE2000 H8S Series Compact Emulator Optional Memory Microcomputer Development Environment System 2003.4 www.rss.renesas.com .V53C808H - HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
MOSEL VITELIC V53C808H HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 35 35 ns 18 ns 14 ns 70 ns PRELIMINARY HIGH.C5250 - VCXO 5X7 Surface Mount Package Reflow Process Compatible Optional ACMOS
C5250 Typical Applications Base Stations Test Equipment Telecom & Wireless Infrastructure Digital Switching VCXO Features 5X7 Surface Mount Package .V53C16258H - HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
MOSEL VITELIC V53C16258H HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 25 25 ns 13 ns 10 ns 45 ns PRELIMINARY HIG.V53C16258L - HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
MOSEL VITELIC V53C16258L HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 35 35 ns 18 ns 14 ns 70 ns HIGH PE.IXDN55N120 - High Voltage IGBT with optional Diode
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = .IXDH35N60BD1 - IGBT with optional Diode
IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C.V53C518165A - 1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
MOSEL VITELIC V53C518165A 1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH HIGH PERFORMANCE Max. RAS Access Time, (tRAC) Max. Column Add.IXDH35N60B - IGBT with optional Diode
IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C.IXDP35N60B - IGBT with optional Diode
IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C.