IXDP35N60B Datasheet - IXYS Corporation

IXDP35N60B IGBT with optional Diode

IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C G G C TO-247 AD IXDH E IXDH 35N60 B IXDP 35N60 B E IXDH 35N60 BD1 G C E C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 30 .

IXDP35N60B Features

* q q q q q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-247 q NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy parall

IXDP35N60B_IXYSCorporation.pdf