IXDA20N120AS Datasheet - IXYS Corporation

IXDA20N120AS High Voltage IGBT

IXDA 20N120AS High Voltage IGBT Short Circuit SOA Capability Square RBSOA IC25 = 38 A VCES = 1200 V V = CE(sat) typ 2.4 V TAB 1 3 h TAB IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 V ±20 V TC = 25°C TC = 90°C VGE = 15 V; RG = 82 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive 38 A 25 A 35 A VCES 10 µs TC = 25°C 200 W Symbol VCE(sat) VGE(th).

IXDA20N120AS Features

* NPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling

* TO-263 package - SMD assembly - industry standard outline Applications

* drives

* power supplies - switched mode power supplies - uninterruptible power supplies IXYS reserve

IXDA20N120AS_IXYSCorporation.pdf