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IXDP20N60B - High Voltage IGBT

IXDP20N60B Description

IXDP20N60B High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage Replacement IXYP20N65B3 VCES = 600 V IC25 = 32 A V = CE(sat).

IXDP20N60B Features

* VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V
* NPT IGBT technology 600 V
* low switching losses
* low tail current ±20 V
* no latch up VGEM IC25 Transient TC = 25°C ±30 V
* short circuit capability 32 A
* positive tempera

IXDP20N60B Applications

* °C
* AC motor speed control °C
* DC servo and robot drives
* DC choppers Nm
* Uninteruptible power supplies (UPS)
* Switch-mode and resonant-mode g power supplies se Symbol a V(BR)CES VGE(th) h ICES p IGES Conditions VGE = 0 V IC = 0.4 mA, VCE = VGE VCE = VCES VCE = 0 V,

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Datasheet Details

Part number
IXDP20N60B
Manufacturer
IXYS Corporation
File Size
209.84 KB
Datasheet
IXDP20N60B_IXYSCorporation.pdf
Description
High Voltage IGBT

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High Voltage IGBT IXYS Corporation
IXYS Corporation IXDP20N60B-like datasheet