IXDP20N60B Datasheet - IXYS Corporation

IXDP20N60B High Voltage IGBT

IXDP20N60B Features

* VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V

* NPT IGBT technology 600 V

* low switching losses

* low tail current ±20 V

* no latch up VGEM IC25 Transient TC = 25°C ±30 V

* short circuit capability 32 A

* positive tempera

Datasheet Details

IXDP20N60B

IXYS Corporation

209.84 KB

High voltage igbt.

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