* VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V
* NPT IGBT technology 600 V
* low switching losses
* low tail current ±20 V
* no latch up VGEM IC25 Transient TC = 25°C ±30 V
* short circuit capability 32 A
* positive tempera
IXDP20N60B Datasheet (209.84 KB)
IXDP20N60B
IXYS Corporation
209.84 KB
High voltage igbt.
IXDP20N60B
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
Replacement IXYP20N65B3
VCES = 600 V
IC25
= 32 A
V = CE(sat).
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